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GaN

Filtronic has developed a family of extremely compact, high efficiency booster amplifier modules based on our proprietary GaN power FET technology. These modules are ideally suited to long haul point-to-point and other microwave power applications.

The range of point-to-point backhaul radio links operating in the lower frequency microwave bands can be significantly increased by the addition of high power booster amplifiers. To address this requirement, Filtronic Broadband has developed a family of extremely compact, high efficiency amplifier modules based on our proprietary GaN power FET technology. GaN technology offers excellent power added efficiency over more traditional class A products.

Filtronic GaN amplifiers are manufactured using our own high reliability chip and wire assembly processes. Furthermore, products variants can be developed to meet customer specific requirements. Current features include:

  • Frequency ranges from 5.8 to 11.7GHz
  • High RF power (>50W)
  • Excellent efficiency
  • Superior linearity
  • Integrated coupled RF output enabling pre-distortion and power detection
  • Integrated isolator (if required)
  • SMA connectivity
  • Small footprint
  • Volume manufacture

Currently these products are aimed at the traditional long-haul radio bands, 6GHz to 11GHz. However, development is planned to explore the feasibility of our GaN technology to enable cost effective, increased power solutions at higher frequencies.

Filtronic amplifiers suit multiple applications including RF testing - where high efficiency, high output power and linearity are the key requirements.

Please contact us to enquire about the existing product range or if you would like Filtronic to quote to design and manufacture a product solution.